Rogue Valley Microdevices deposits PECVD films on silicon wafers at our U.S.-based, ITAR-registered MEMS fab. Our PECVD deposition services cover silicon dioxide, silicon nitride, and silicon oxynitride with reliable dielectric insulation, controlled film stress, and low processing temperatures that protect temperature-sensitive device layers. Plasma enhanced chemical vapor deposition (PECVD) produces high-quality dielectric thin films at relatively low processing temperatures, which makes it an essential technology for MEMS fabrication and semiconductor manufacturing. Because these films deposit at moderate temperatures, they are back-end-of-line (BEOL) compatible: they integrate cleanly with temperature-sensitive device structures and can go down over existing metal and device layers late in a process flow. Every PECVD film we ship runs on the same equipment and recipes we use to build MEMS devices in our own foundry. This wafer service can be combined with thermal oxidation or deposited over PVD metal and dielectric films, all without your wafers ever leaving our fab. PECVD thin films are widely used for device passivation, dielectric insulation, and protective coatings in microfabricated devices. By pairing controlled plasma-assisted deposition with flexible wafer processing, we support engineers developing MEMS sensors, semiconductor components, and advanced microdevices. Low-temperature, single-side deposition. Gas enters through the showerhead, the plasma drives the reaction below 350 °C, and the film forms only on the side facing the plasma — the wafer backside stays bare on the recessed platen. Full Stack In-House: PECVD layers stack cleanly with thermal oxide, LPCVD, and PVD films, all deposited under one roof Low Thermal Budgets: Low-temperature recipes support BEOL processing over metal layers and temperature-sensitive device structures Production-Grade Films: The same tools and recipes that run our full MEMS programs, whether you send a prototype lot or a recurring volume order Engineering Collaboration: Direct work with our process engineers on film stress, targeted refractive index, and process integration Broad Wafer Support: Customer-supplied wafers welcome, from 50.8mm to 300mm Ready-to-Ship Inventory: Pre-processed coated wafers available in our online shop for supply-chain resilience PECVD deposition is available on 50.8mm, 76.2mm, 100mm, 125mm, 150mm, 200mm, and 300mm wafers. Double-side-polished wafers with existing backside patterning are supported on our recessed-platen tool, which keeps the wafer backside off the heater surface. Supported substrate materials include: - Silicon - Silicon on insulator (SOI) - Quartz - Sapphire - Other specialty materials PECVD deposition offers several advantages for semiconductor and MEMS manufacturing processes: - Low-temperature thin film deposition - Reliable dielectric insulation layers - Consistent wafer-level film uniformity - Strong adhesion to silicon wafers and other substrates - Controlled film stress for device integration - Good conformal coverage across microstructures These characteristics make PECVD films particularly useful in process flows where thermal budgets are limited or where films must be deposited over existing device layers. PECVD Film Applications - MEMS pressure sensors - Accelerometers and inertial sensing devices - Microfluidic and lab-on-chip devices - Optical MEMS components - Device passivation - Dielectric isolation layers Because our PECVD deposition services run inside a working MEMS foundry, the film on your first prototype lot is the same production-grade film you will get at volume. Our engineers share process data openly and help you plan how a PECVD layer fits your full stack, from thin film deposition through downstream patterning and etch. If you are still defining your device, our MEMS design services team can help you get the film stack right from day one.
