By Holonyak Micro & Nanotechnology Lab
The Oxford Freon ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) system is primarily used for high-rate, anisotropic etching of dielectric materials. The tool is load-locked and configured to process sample sizes ranging from small dies to 100 mm wafers. The system supports substrate temperatures from -10°C to 50°C, enabling optimization of etch profiles, selectivity, and surface quality for a variety of materials. Available Process Gases: CHF₃, SF₆, CF₄, Ar, O₂ Materials Commonly Etched: Silicon (Si), Silicon Dioxide (SiO₂), Silicon Nitride (Si₃N₄), Graphene, Silicon Carbide (SiC) Operating Limits - RF Bias Power: Up to 250 W - ICP Source Power: Up to 2000 W - Chamber Pressure: 3–80 mTorr - Chuck Temperature: -10°C to 50°C - Wafer Size: Small samples to 100 mm wafers Sample Preparation Requirements: - Samples must be securely mounted to a carrier wafer using Crystalbond. - No metal-containing samples are allowed except Al 2 O 3. - Users introducing new materials or developing new etch processes should consult facility staff before use.
