By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Method for producing heteroepitaxial structures in ultra high vacuum based on atoms or molecules deposition evaporated from heated sources onto heated substrate. SemiTEq MBE system growth geometry provides high GaAs layers, as well as others A3B5, layers and doping level thickness uniformity on substrates up to 150 mm. Increased volume (150-300 cm3) of III-group materials effusion cells ensures longtime growth rate stability.
