SIMS is an extremely sensitive sputter depth profiling technique used to measure the concentration of dopants and impurities in solids as a function of depth. A variation is to use ultra-low energy primary beams (ULE SIMS) which significantly reduces the near surface 'pre-equilibrium' region; essential for accurate near surface & low energy implant analyses. This also markedly reduces the 'ion beam mixing effects' thereby providing a depth resolution of 1-2 nm under non-roughening conditions. If sputter induced roughening is unavoidable (as in metals or polycrystalline materials) sample rotation is the best route for achieving good depth resolution. Applications - Dopant Diffusion Profiling: e.g. B, P, As in Si; N and Al in SiC and Zn, Si, Be etc in compound semiconductors - Dose Measurements: Implant dose and energy, including low energy implants. - Impurity Measurements: Trace elements (e.g. O, C, N, H) introduced during synthesis, deposition, or growth. - Matrix Composition: Quantitative measurement of matrix composition of heterostructures in compound semiconductors. - Reverse Engineering: Doping concentrations, diffusion profiles and layer thicknes Materials - Silicon Technology: SiC, SIGe, Barrier Oxides, PSG, BPSG - III-V Compound Semiconductors: GaAs, AlGaAs, InP, AlInP - Nitrides (Wide-Bandgap Materials): GaN, InGaN, AlGaN, CdTe
