The following standard processes are available: - annealing after ion implantation (boron/arsen/phosphorus) @ 950°C, 30 min - diffusion (dopant drive in) after ion beam implantation (boron/arsen/phosphorus) @ 1100°C, time variable (process time based TESIM simulation results) - post-sputter annealing of Al-Si contacts @ 350/400°C, 30 min
