Thermal Oxidation of Silicon CMOS-compatible quartz furnace processes (Centrotherm), dry and wet oxidation 100 and 150mm wafer size, batch quantity: up to 50 wafers per run. - LOCOS oxide (LPCVD nitride mask layer) - Gate Oxide, standard thickness 40 nm - Field Oxide, standard thickness 1000 nm - Cusomized Oxide layers possible, thickness range 10 nm up to 1500 nm thickness non-uniformity across wafer: <2% average thickness non-uniformity wafer-to-wafer: <3% average thickness non-uniformity batch-to-batch: <5%
