By Holonyak Micro & Nanotechnology Lab
The Oxford Cl ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) system is dedicated to the etching of III-V compound semiconductors and other approved materials. The tool is load-locked and configured to process sample sizes ranging from small dies to 100 mm wafers. The system is equipped with both a laser interferometer reflectance detector enabling precise process monitoring and endpoint detection during etching. Available Process Gases:Cl₂, BCl₃, CH₄, SF₆, Ar,O₂,H₂ Materials Commonly Etched:GaAs, InGaAs, InP, GaN, Ga₂O₃,Al₂O₃, Diamond Operating Limits: Parameter Range / Limit RF Bias Power Up to 250 W ICP Source Power Up to 2000 W Chamber Pressure 3–80 mTorr Chuck Temperature-5°C to 45°C Wafer Size Small samples to 100 mm wafers Sample Preparation Requirements - Samples must be securely mounted to a carrier wafer using Crystalbond. - No metal-containing samples are allowed except Al 2 O 3. - Users developing new etch processes or introducing new materials should consult facility staff before use.
