By Nano-Chemika
RIE ( Reactive Ion Etching) and DRIE ( Deep Reactive Ion Etching) services for the controlled gas-phase plasma etching of silicon substrates are available. Silicon, Silicon Oxide, Organic films etching using a variety of plasma chemistries is performed with gasses such as CF4, CHF3, C4F8, SF6, O2, and Ar. Etching services can be done separately or as part of photolithographic processed: - RIE (Reactive Ion Etching) & DRIE (Deep RIE) services. - Etching silicon, silicon oxide, silicon nitride, organic films & more. - O2, Ar and flourine based gases are available. - Selective wet-etch for most elements.
