Today, GaN laser diodes suffer from significant optical and resistive loss, leading to low conversion efficiencies in the 45% range compared to the 90% approach in GaN-based LEDs. Contact and series resistance can account for up to 50% of the power consumed in GaN-based laser diodes. Our revolutionary growth technology, called remote plasma chemical vapor deposition (RPCVD), offers many unique benefits to our customers – including the novel, low resistivity, and higher efficiency laser diodes. BluGlass’ novel laser diode designs replace the highly lossy materials in traditional laser diode designs by combining the best of traditional nitride growth techniques with our own unique low-temperature, low hydrogen nitride growth process – to enable novel and higher efficiency laser diodes. Could RPCVD improve your device performance and help drive your next laser product?
