SRP is a technique for the measurement of “resistivity” and electrically active dopant concentrations versus depth in silicon. The technique involves the preparation of a suitable bevel and then the measurement of resistivity across the bevel using a pair of probes. Applications - Profiling of electrically active p-type and n-type dopants - Junction Depth evaluation - Shallow or very deep profiles - High dynamic range and extremely low detection limits Materials - Works for silicon - Patterned wafers or plain wafers - Alternative techniques are SIMS Analysis or ECV
