By IONTOF GmbH
Typical application areas of ultra-shallow depth profiling are the classical SIMS tasks in the semiconductor industry. Here, mainly the profiling of low energy implants of boron, phosphorous and arsenic are of interest, but also the profiling of ultra-shallow gate oxides and the detection of trace elements within the native oxide requires excellent sensitivities for low energy sputtering. The parallel detection of all masses allows the measurement of the also implanted F as well as of metal contaminants e. g. Aluminium at the same time, thus making the technique well-suited for screening purposes.
