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SemiconductorOctober 9, 2026 · 1 min read

GlobalFoundries Unveils FDX Fusion in Dresden for Physical AI

Dresden, 9 October 2026. GlobalFoundries today (Oct. 9) unveiled FDX Fusion in Dresden, a new generation of its fully depleted silicon-on-insulator (FD-SOI) technology aimed at physical AI. The first generation is expected to offer 7-nm-class digital performance and more than twice the density of GlobalFoundries' first-generation FDX technology.

Manfred Horstmann, senior VP and general manager of European fabs at GlobalFoundries, said the company expects to invest roughly $1 billion over the coming years in FDX Fusion development, including about $250 million for the initial capability toolset. Demonstrator silicon is targeted for early 2027, with an initial process design kit planned for mid-2027.

FDX Fusion will combine RF, analog, mixed-signal, embedded nonvolatile memory, in-memory computing, and dense logic capabilities. Horstmann said the platform should reach logic densities of roughly 14 million to 18 million gates per square millimeter.

GlobalFoundries is developing the strained-silicon substrate with CEA-Leti and Soitec through a European project Horstmann identified as "Fast and FAMES." The partners have built a pilot line in France for the substrate, which uses a strained 70-angstrom silicon film intended to increase electron mobility by about 25%.

The announcement came as GlobalFoundries celebrated the topping-off of SPRINT, its Dresden fab expansion supported under the European Chips Act. The project is adding cleanroom, laboratory, and manufacturing capacity at the site.

Source: EE Times