Marktech and Optrans expand quad InGaAs PIN photodiode portfolio from 1.7µm to 2.6µm

Latham, NY, 13 October 2026. Marktech Optoelectronics and Optrans America Corporation announced an expanded portfolio of four-channel indium gallium arsenide (InGaAs) PIN photodiodes for optical systems requiring infrared detection and positional information. The portfolio combines 1.7 µm-cut-off and extended 2.6 µm-cut-off InGaAs technologies.

The lineup includes a 1.7 µm-cut-off monolithic quadrant photodiode, one InGaAs die divided into four sensing segments, and a 2.6 µm-cut-off assembled four-element detector, four discrete extended-InGaAs photodiode chips arranged in a 2 × 2 pattern. Both configurations provide four separately readable detection channels.

The monolithic devices offer spectral sensitivity from 600 nm to 1750 nm, with package options including a TO-5 metal can (MTPD4346T38-300) and a 7.24 × 7.24 mm surface-mount package (MTSM1346SMF3-SP4-030). The extended-wavelength configurations offer spectral sensitivity from 800 nm to 2600 nm, with 5.0 × 5.0 mm (MTSM2601SMF2-SP4-030) and 7.24 × 7.24 mm (MTSM2601SMF3-SP4-100) surface-mount formats.

Target applications include laser alignment and precision positioning, optical communications and industrial sensing, and extended-infrared analytical instrumentation. Marktech and Optrans also support customer-specific detector development and packaging, and plan to continue expanding the portfolio with additional detector sizes, wavelength ranges, package formats, and multi-element solutions.

Source: Marktech Optoelectronics Inc news