STMicroelectronics adds MasterGaN7 devices to MasterGaN family

21 October 2026. STMicroelectronics has extended its MasterGaN integrated transistor/driver family with new MasterGaN7 devices. The devices contain 650V enhancement-mode GaN transistors with a 6A maximum current rating. The company said the series helps designers boost efficiency and power density in power adapters, chargers, industrial lighting equipment, and solar microinverters.

MasterGaN7 connects the two 650V GaN transistors in half-bridge configuration, with a high-voltage, high-frequency gate driver, in a QFN package that shares its pinout and footprint with other MasterGaN devices. The devices introduce low drop-out (LDO) regulators to stabilize the gate-drive voltage. They also feature a pin-driven shut-down mode with ultra-fast wakeup that helps designers minimize no-load power consumption.

Combining propagation delay of 45ns with ultra-fast wake-up time and short minimum on-time, the MasterGaN7 devices can operate at switching frequency of up to 2MHz. STMicroelectronics said only small external magnetic and passive circuit components are needed to complete the circuit design, which helps minimize circuit footprint, lower BOM costs, and maximize power density. An integrated bootstrap diode supplies the high-side driver.

All MasterGaN devices support topologies including active clamp flyback and asymmetrical half bridge converters, inverse buck converter, resonant LLC converter, power factor correction (PFC) converters, and DC-to-AC inverters. Protection features include interlocking to prevent cross-conduction, undervoltage lock-out (UVLO), and thermal shutdown.

MasterGaN7 operates from -40°C to 125°C and is in production now in a 9mm x 9mm QFN package. Pricing starts from $3.83 for orders of 1000 pieces. The EVLMG7 evaluation board is available now in the STMicroelectronics eSTore.

Source: STMicroelectronics news