By Nano-Chemika
Samples can be heated in order to activate dopants, change substrate interfaces, crystallize deposited films, change states of grown films, repair damage from ion implantation, move dopants, from a film into the wafer substrate or improve metal-semiconductor interface conductivity. - Maximum temperature of 1200°C - Processing can be done in forming (H2+ N2), Nitrogen, Oxygen and Ar - Sample up to 6-inch
