By Asia Pacific Microsystems Inc.
Metallization - Sputter Deposition: Ti, TiN, TiW, Al, AlCu, AlSiCu, TaAl, Ta, Ta2O5, Cu, Pt, Au - Evaporation: Ti, Al, Cu, Ni, Au, Pt, AuSn, Cr, Ag - Electroplating: Cu Thin Film Deposition - PECVD Oxide - PECVD Nitride - PECVD Amorphous Silicon - PECVD Silicon Carbide - PECVD PSG/BPSG Furnace / LPCVD Process - Thermal Oxidation (900-1150ºC) - LPCVD Nitride (Standard, Low stress) - LPCVD Poly-Silicon - Annealing - Metal alloy Ion Implantation - Medium Current: (Max Energy: 160 keV, Dose: 10 12-10 14 atom/cm 2) - High Current: (Max Energy: 120 keV, Dose: 10 14-10 16 a tom/cm 2) - Species: B, BF2, P, As
