By LayTec GmbH
Achieving sub-nm precision in plasma etch end-pointing by reflectance-based in-situ metrology Similar to deposition processes, also etching processes can be monitored by in-situ reflectance with sub-nm-accuracy Here, modeled-based algorithms, highly precise optical dispersion data as well as choice of the most suitable wavelengths allow for unprecedented accuracy in determination of in-layer etch depth Full integration of LayTec’s EPD in-situ metrology allows for fully exploiting the capability of Oxford Instruments’ ALE chamber Novel in-situ metrology for ALE may enable industrial roll-out of gate recessed normally-off MISHEMT as an alternative to pGaN HEMT Interpreting etching as “inverted epitaxy” Applying identical methods for in-situ monitoring Model-based analysis Highly precise n,k data Choice of suitable wavelength for a given material system
