By Incize
Raman spectroscopy is an optical non-destructive characterization technique used to analyze numerous materials including semiconductors and thin films with none or minimum sample preparation. The information obtained is extremely rich and can be used to identify material composition, stress and strain, doping concentration and phase formation. Since the discovery of the Raman effect in 1928 by Sir C.V. Raman [1], the advance in laser technology and fabrication of high selective filters has permitted a rapid development in Raman instrumentation. Today, the use of high resolution lenses, gratings and detectors allows the characterization of the Raman effect in structures and materials down to micrometer and nanometer size. New to our customers, Incize provides high resolution Raman spectroscopy for the characterization of materials and samples with spatial resolution down to ~1 μm. Equipped with four laser wavelengths, 458, 488, 514 and 633 nm and a motorized stage in x-y-z, we can perform micro-Raman analysis such as chemical composition, phase, crystallinity and strain in numerous materials including those most used in the semiconductor industry (Si, Poly-Si, Ge, SiGe, GaN), 2D materials (graphene, hBN), phase transition materials (VO2, V2O5, GeTe) and piezoelectric materials (LiNbO3, LiTaO3, ZnO). We also offer the possibility of performing Raman-temperature measurements in the range -196°C to 600°C. High resolution confocal microscope 800 mm focal length Lateral resolution below 1 μm Laser wavelengths 458, 488, 514 & 633 nm Temperature -196°C... +600°C Mapping analysis including chemical composition, phase, crystallinity and strain
