By Incize
Incize is your partner in semiconductor characterization and modelling for the design of digital, analog/RF and harsh environment applications. We specialize in the characterization of active and passive devices and materials for model parameter extraction and PDK development. We have unique know-how in characterization of Si and SOI substrates including high resistivity and trap rich materials. We have deep knowledge in GaN-on-Si substrates and technology. We have experience and infrastructure to design, characterize, simulate and model: - DC, analog and RF performance (DC to 130 GHz) - Flicker (1/f) noise - RF (thermal) noise - Self-heating - Harsh environment performance (4 – 600 K) - Substrate parasitic effects - Nonlinear behavior (harmonic distortion and intermodulation) - Low-voltage low-power operation and subthreshold discontinuities - Radiation hardness We support: - FET/bipolar transistors of all technology nodes on bulk and SOI platforms - HEMT devices on GaN platforms - Passive components - Substrates (assessment of trap density in substrates and at interfaces, e.g. Si/SiO2, GaN/Si, GaN/SiC, etc.) - On-wafer and packaged devices
