Reduce RF switch design area with SLATE™ wafer-to-wafer bonding technology Our SLATE technology with 9SW enables advanced 3DI by vertically stacking FETs across bonded wafers, reducing RF switch area while maintaining the electrical performance required for modern front-end modules. With automated, PDK-driven design flows, designers can convert traditional 2D 9SW RF switch designs into compact 3D architectures without a ground-up redesign. Watch the tutorial to see how you can reduce your RF switch design area by up to half by migrating your existing RF design from 9SW to SLATE technology with 9SW. Contact your GF representative to learn more about engagement opportunities and detailed tutorials explaining simulation and verification steps.
