MTL focuses on development, demonstration, and maturation of world-class RF GaN high electron mobility transistor (HEMT) devices and MMICs. MTL's GaN HEMTs have demonstrated superior high-frequency gain, noise figure, and power-added efficiency relative to all other available GaN MMIC foundry processes at millimeter-wave frequencies. MTL is seeking new opportunities to mature its GaN HEMT technologies and prepare them for system insertions.
