By Molecular Analysis Facility (MAF)
Make/Model: IONTOF TOF.SIMS 5 Location: MolES G42H ToF-SIMS is a surface analytical method that provides chemically specific information about the upper 1-2 nm of a surface. The IONTOF TOF.SIMS 5 is capable of producing high mass resolution spectra (m/detlaM ~ 6000-10000) and high spatial resolution images (< 1 micron edge resolution) of any surface that can be placed in an ultra high vacuum environment. The TOF.SIMS 5 also has a gas cluster ion beam (GCIB) for sputtering which enables depth profiling of organic materials, perovskites, and some oxides. Key Capabilities - Generation of detailed mass spectrum of the outermost 1-2 nm of a surface - 2D and 3D chemical imaging - Identification of structural units present at the surface, e.g. monomeric components and repeat units) - Contamination detection Data Produced - High resolution spectrum of the outer surface - Image of the surface distribution of all detected species within the sampled area - Plots of z-distribution of detected species (for depth profiles) - Data is not directly quantitative, however relative differences differences in peak intensities are significant and representative of sample differences Example Applications - Detection of contaminants - Identification of surface-active additives - Characterization of surface modification treatments - Examination of adsorbed/immobilized biomolecules - Determination of supramolecular structures - Chemical imaging of patterned surfaces Compatible Samples - Any vacuum compatible material - Maximum sample size: 2.5 inches x 2.5 inches - Maximum sample thickness: ~1 cm - Samples containing PDMS are allowed on a case by case basis and may incur additional charges due to potential contamination issues
