ResiScope™ III maps grain-level conductivity in perovskite films and doped-layer interfaces in silicon solar cells, over several orders of magnitude in one pass. ResiScope™ III adds grain-level conductivity in perovskite films and the doped-layer interfaces of silicon cells over several orders of magnitude in one scan. ResiScope™ maps local current and resistance across the perovskite film surface at nanoscale resolution. Its 10-decade dynamic range (fA to μA, 10² to 10¹² ohms) in a single scan pass allows simultaneous visualization of both highly conductive grain cores and highly resistive grain boundaries or insulating domains — without manual gain adjustment. This is critical for perovskite because resistance variations of several orders of magnitude exist within a single 2–10 µm scan area. ResiScope measurements identify current-blocking grain boundaries, shunting pathways, and local conductivity heterogeneity that directly affect photovoltaic performance. AFM scan of perovskite solar cell film — ResiScope™ resistance: resistive grain boundaries and conductive grain interiors. AFM scan of silicon solar cell cross-section — ResiScope™ resistance: doped layer interfaces and resistance gradients.
