Layout Guidelines Indium Bumps 1 Bump Height Average 35 µm std. (Capability: 5-50 µm) (Bump Size Dependence) 2 Bump Height Uniformity ±10% (in die); ±30% (in wafer); ±30% (wfr to wfr) 3 Bump Pitch 20 µm Minimum (Bump Size Dependence) 4 Bump Spacing 10 µm Minimum 5 Bump to Passivation Overlap 7 µm Per Side Minimum 6 Edge of Bump to Aluminum 7 µm Per Side Minimum 7 Passivation Opening 10 µm Minimum 8 Passivation Angle of Slope > 60 Degrees 9 Passivation Type Nitride, OxyNitride, Polyimide 10 Passivation Height 0.5 – 1.8 µm 11 Wafer Edge Exclusion 3 mm 12 Bump Mask Layout and Procurement TLMI In-house Capability: Requires GDSII, Stepping Distance, Wafer Map Bump Specifications Indium Bumps 1 Bump Material 99.9+% Indium 2 Bumping Method Electroplating 3 UBM Material WTi, WTI/Au/Nickel 4 UBM Deposition Method Sputtering, Sputtering/Plating
