NEWSROOM

Researchers have succeeded in unraveling for the first time the mystery of the 'electron tunneling' process, a core concept in quantum mechanics, and confirmed it through experiments. This study was published in the international journal Physical Review Letters and is attracting attention as a key to unlocking the long-standing mystery of 'electron tunneling,' which has remained unsolved for over 100 years.

In the new study, the researchers demonstrated that anodic polarization of graphite in an electrochemical cell induces the formation of likely oxidized graphene sheets that spontaneously self-assemble into fullerenes and hollow spheres. The final product was characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), mass spectrometry (MALDI-TOF), and visible ultraviolet spectroscopy (UV-Vis)

Stacking and twisting two graphene layers forms a moiré pattern, enabling superconductivity. Adding a third, differently twisted layer creates supermoiré patterns, altering electron flow. Harvard SEAS researchers, led by Yonglong Xie and Andrew Pierce, used a 100-nanometer resolution microscope to probe trilayer graphene. Published in Science, their findings reveal novel electronic states, highlighting supermoiré patterns’ role in engineering tunable materials for quantum tec

The chip, as thin as a strand of hair, uses two pairs of microring modulators to achieve unprecedented performance levels.

In a growing and very competitive research landscape in quantum, this work demonstrates the versatility of the semiconductor–superconductor platform to realize and study new types of quantum states.

The newly developed method leverages a structure-directing agent to modify the crystal structure of the seed edges. It also redirects growth of the second phase from the formation of isolated particles to epitaxial growth at the seed edges. The modified synthesis is expected to be extendable to other layered materials, enabling the fabrication of a range of 2-D heterostructures for optoelectronic and electronic devices.